It is extremely challenging to scale bulk silicon transistors, when the lengths are close to 15nm. 3D Transistor design and Silicon-On-Insulator (SOI) devices are getting more attention to improve the scalability of silicon technology. Carbon Nanotube Transistors have been treated as a possible replacement for silicon transistors, but the question is that, ‘Can CNT transistors can offer better performance over silicon at sub-10 nm lengths?’. Now the experimental results from IBM Research are indicating that the answer is ‘Yes’.
There are various opinions in the nanoelectronics community about Carbon Nano Tube transistors, that they can able to maintain their impressive performance at extremely scaled levels.Some peoples says that the very low effective mass of the carriers will cause tunnelling and breakdown the device around 15nm, this opinion was supported by some theoretical studies. While others remain convinced that the the ultra thin body of single walled Carbon Nano Tubes would allow excellent transistor behaviour even down to 10nm range.
These results of the research will trigger more and more researches about CNT transistors and the main challenge to this was funding. We can hope that these positive results will inspire funding agencies to give funds and makes this technology into a reality.